Molecularbeamepitaxy相关论文
Investigation into the InAs/GaAs quantum dot material epitaxially grown on silicon for O band lasers
InAs/GaAs quantum dot (QD) lasers were grown on silicon substrates using a thin Ge buffer and three-step growth method i......
Introducing magnetism into topological insulators (Tls) can tune the topological surface states and produce exotic physi......
Monolayer MnTe2 stabilized as 1T structure has been theoretically predicted to be a two-dimensional (2D) ferromag-netic ......
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Controllable growth of SiGe three-dimensional quantum dot crystals and double quantum dot nanostruct
Our work focused on the controllable formation and characterization of semiconductor nanostructures, including a three-d......
Our recent works on the Molecular Beam Epitaxial growth and quantum photonic characteristics of self-assembled InAs/GaAs......
For application in space environments,the effect of 1-MeV electron irradiation on waferbonded GaInP/GaAs//InGaAsP/InGaAs......
Low-dimensional oxide structures have remarkable properties that can be tuned by external fields.Particularly,based on t......
Integration of Ⅲ-Ⅴ materials on germanium(Ge)substrate,which has been investigated for decades,provides an effective m......
Searching for new superconducting film materials and studying their superconductivity have become the frontier scientifi......
In the recent decades,ZnO and related materials have been studied widely for their various applications such as shot wav......
Structural, optical and electronic properties of ZnO thin films grown on MgO(111) substrates by mole
High quality ZnO films are desirable for applications in optoelectronics.In the growth of ZnO thin films on the hexagona......
Advanced semiconductor materials with wide band gaps have developed for decades,causing a rise to new optoelectronic and......
Evidence of bound magnetic polarons from the Raman vibrational modes in high quality ferromagnetic C
High quality Co doped ZnO thin films are grown on single crystalline AL2O3 (0001) by oxygen plasma assisted molecular be......
The pairing mechanism of high-temperature superconductivity in cuprates remains the biggest unresolved mystery in conden......
Crystal Growth of ScAlMgO4 and its application in molecular beam epitaxy of ZnO with high Mg content
ScAlMgO4 (SCAM) acts as the promising substrate having a hexagonal crystal structure with lattice constants of a = 0.324......
在较低温度下实现平整ZnO薄膜的生长有利于ZnO的可控p型掺杂以及获得陡峭异质界面。本文使用分子束外延方法, 采用a面蓝宝石为衬底......
利用分子束外延技术(MBE)，在GaAs(001)衬底上自组织生长了不同结构的InAs量子点样品，并制备了量子点红外探测器件。利用原子力显微镜......
对As2和As4两种不同分子态下利用分子束外延技术(MBE)生长的单层AlGaAs薄膜和GaAs基InGaAs/AlGaAs量子阱红外探测器（QWIP）的性能进行......
用固源分子束外延技术(SSMBE)在GaAs(111)衬底上，采用不同的界面中断时间生长了多组AlGaAs/GaAs多量子阱样品(MQWs)，通过室温发光光......
本文首次报道室温下测量的分子束外延生长的ZnSe-ZnTe应变层超晶格的远红外反射谱.得到了ZnSe、ZnTe横光学声子摸.用长波长超晶格......
利用分子束外延技术,基于控制快门开关顺序的生长中断法,在GaSb衬底上生长了10周期和20周期的InAs(10 monolayer, 10 ML)/GaSb(10 ......
利用Zn扩散方法制备了倍增层厚度为1.5,1.0,0.8 μm的In0.53Ga0.47As/InP雪崩光电二极管(APDs),研究了该器件特性。随着倍增层厚度......
通过分子束外延(MBE)生长技术,在GaAs(100)基片上生长出单晶InxGa1-xAs薄膜,利用反射高能电子衍射仪(RHEED)实时监控薄膜生长情况......
Ⅱ-Ⅵ族镉(Cd)化物，如CdTe、CdSe、CdSeTe等具有直接带隙、光学吸收系数高和电学特性优异等突出特点，在太阳电池、X及γ射线探测器、......
本文介绍了用分子束外延法制作的梯度折射率分别限制式单量子阱GaAs/AlGaAs半导体激光器。该器件具有较低的阈值电流密度和单模运......
通过研究蓝宝石衬底分子束外延(MBE)生长GaN薄膜过程中原位椭偏光谱,发现常规蓝宝石衬底MBE生长GaN薄膜的位错缺陷主要起源于缓冲......
We report 25 Gb/s high-speed directly modulated ground-state operation of 1.3 μm InAs/GaAs quantum dot (QD) lasers grow......
InAs/GaSbⅡ类超晶格由于具有独特的能带结构和良好的材料性能被认为是第三代红外探测器的首选，近年来被广泛研究，并取得快速发展。......
1960年发明的固态激光器和气体激光器,1962年发明的双极型半导体激光器和1994年发明的单极型量子级联激光器(QCL)是激光领域的三个......
本文报道用国产分子束外延设备研制出波长为850nm AlGaAs/GaAs多量子阱激光器。室温阈值电流密度为980A/cm~2、条宽8μm的激光器最......
1.3 μm InAs/GaAs量子点(QD)激光器基于自身优异的光电特性,有望成为下一代光通信系统所急需的高性能、低成本光源。理论分析了提......
用泵浦探针法实验研究了红外激光辐照二氧化钒薄膜的相变特性.首先利用氧源-分子束外延法制备了薄膜厚度分别为20 nm、40 nm、60 n......
The optical properties of materials are of great significance for their device applications.Different numbers of krypton......
Nanoscale structural investigation of Zn1-xMgxO alloy films on polar and nonpolar ZnO substrates wit
Zn1 xMgxO alloy films are important deep ultraviolet photoelectric materials.In this work,we used plasma-assisted molecu......
GaSb-based type-I quantum well cascade diode lasers emitting at nearly 2-μtm wavelength with digital
We report a GaSb-based type-Ⅰ quantum well cascade diode laser emitting at nearly 2-μm wavelength.The recycling of car......
In this paper,InGaAs p-i-n photodetectors (PDs) on an InP/SiO2/Si (InPOI) substrate fabricated by ion-slicing technology......
The spin dependent transport across ferromagnet/semiconductor interfaces depends critically on their structure and e......
Ba2IrO4 is a sister compound of the widely investigated Sr2IrO4 and has no IrO6 octahedral rotation nor net canted antif......
The ultrahigh vacuum scanning tunneling microscope (STM) was used to characterize the GaSb1-xBix films of a few nanomete......
利用固态源分子束外延技术在GaSb衬底上生长In GaAsSb/AlGaAsSb量子阱激光器结构,研制了激 射波长为2.0μm波段的GaSb基量子阱激光......
The self-catalyzed growth of GaAs nanowires (NWs) on silicon (Si) is an effective way to achieve integration between gro......
Vertical MBE growth of Si fins on sub-10 nm patterned substrate for high-performance FinFET technolo
A high quality epitaxial Si layer by molecular beam epitaxy (MBE) on Si (001) substrates was demonstrated to fabricate a......
基于分子束外延(MBE)生长技术获得了高量子效率的InAs/GaSbT2SLs中波红外(MWIR)光电探测器结构材料,表现出了层状结构生长的光滑表......
探索利用反应离子刻蚀 ( RIE)和湿法腐蚀 Si1-x Gex 合金材料的工艺条件。对两种腐蚀方法的利弊进行了对比 ,找出腐蚀 Si1-x Gex ......
采用分子束外延技术（ＭＢＥ）生长了具有ＧａＡｓ／ＡｌＧａＡｓ超晶格缓冲层的单量子阱和多量子阱材料。采用ＧａＡｓ／ＡｌＧａＡｓ超晶格缓冲层掩埋衬底缺陷，获得的量子阱结构材料成功地......
